 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 0.05-50.0 GHz GaAs MMIC Distributed Amplifier July 2007 - Rev 11-Jul-07 D1002-BD Features Wide Band Driver Amplifier 9.0 dB Small Signal Gain 5.0 dB Noise Figure 15.0 dB Gain Control +9.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 Chip Device Layout General Description Mimix Broadband's 0.05-50.0 GHz GaAs MMIC distributed amplifier has a small signal gain of 9.0 dB with a noise figure of 5.0 dB across the band. The device also includes 15.0 dB gain control and a +9.0 dBm P1dB compression point. This MMIC uses Mimix Broadband's 0.15 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for microwave, millimeter-wave, wideband military, and fiber optic applications. Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id) Gate Bias Voltage (Vg) Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +10.0 VDC 150 mA +0.3 VDC +18 dBm -65 to +165 OC -55 to MTTF Table 2 MTTF Table 2 (2) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life. Electrical Characteristics (Ambient Temperature T = 25 oC) Parameter Frequency Range (f ) Input Return Loss (S11) Output Return Loss (S22) Small Signal Gain (S21) Gain Flatness ( S21) Gain Control Reverse Isolation (S12) Noise Figure (NF) Output Power for 1 dB Compression (P1dB)1 Drain Bias Voltage (Vd) Gain Control Bias (Vg1) Gate Bias Voltage (Vg2) Supply Current (Id) (Vd=8.5V, Vg1=0.0V, Vg2=1.0V Typical) (1) Measured using constant current. Units GHz dB dB dB dB dB dB dB dBm VDC VDC VDC mA Min. 0.05 -2.0 - Typ. 14.0 14.0 9.0 +/-1.5 15.0 40.0 5.0 +9.0 +8.5 0.0 +1.0 120 Max. 50.0 +9.0 0.1 140 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 1 of 6 Characteristic Data and Specifications are subject to change without notice. (c)2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 0.05-50.0 GHz GaAs MMIC Distributed Amplifier July 2007 - Rev 11-Jul-07 D1002-BD Distributed Amplifier Measurements XD1002-BD Vd=8.5 V Id=120 mA ~70 Devices 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 0.05 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 50 Frequency (GHz) Max Median Mean Min Max 0 -10 Reverse Isolation (dB) XD1002-BD Vd=8.5 V Id=120 mA ~70 Devices -20 -30 -40 -50 -60 -70 -80 0.05 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 50 Frequency (GHz) Median Mean Min Gain (dB) XD1002-BD Vd=8.5 V Id=120 mA ~70 Devices 0 Output Return Loss (dB) XD1002-BD Vd=8.5 V Id=120 mA ~70 Devices 0 -5 -10 -15 -20 -25 -30 -35 -5 Input Return Loss (dB) -10 -15 -20 -25 -30 -35 -40 -45 0.05 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 50 Frequency (GHz) Max Median Mean -3sigma 0.05 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 50 Frequency (GHz) Max Median Mean Min XD1002-BD Vd=8.5 V Id=120 mA ~30 Devices 13 12 Output Power P1dB (dBm) 11 10 9 8 7 6 5 4 3 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 50 Frequency (GHz) Max Median Mean Min Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 2 of 6 Characteristic Data and Specifications are subject to change without notice. (c)2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 0.05-50.0 GHz GaAs MMIC Distributed Amplifier July 2007 - Rev 11-Jul-07 D1002-BD Distributed Amplifier Measurements (cont.) Sparams 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 -22 -24 -26 -28 -30 0 5 10 12 11 Noise Figure & Gain from 3 samples; Vd=8.5V, Id=120mA, Vg1=0V, Vg2=1V Noise Figure & Gain (dB) S22 10 9 8 7 6 5 4 3 2 S21 S11 15 20 25 30 35 40 45 Frequency (GHz) 50 55 60 65 70 1 0 18 20 22 24 26 28 30 32 34 36 38 40 42 Frequency (GHz) Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 3 of 6 Characteristic Data and Specifications are subject to change without notice. (c)2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 0.05-50.0 GHz GaAs MMIC Distributed Amplifier July 2007 - Rev 11-Jul-07 D1002-BD Mechanical Drawing 1.300 (0.051) 0.295 (0.012) 0.695 (0.027) 2 3 4 1.005 (0.040) 0.295 (0.012) 0.0 1 5 0.0 1.360 (0.054) (Note: Engineering designator is 25LN6DA0522) 1.950 (0.077) Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad. Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold All DC Bond Pads are 0.100 x 0.100 (0.004 x 0.004). All RF Bond Pads are 0.100 x 0.200 (0.004 x 0.008) Bond pad centers are approximately 0.109 (0.004) from the edge of the chip. Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 1.417 mg. Bond Pad #1 (RF In) Bond Pad #2 (Vg2) Bond Pad #3 (Vd) Bond Pad #4 (RF Out) Bond Pad #5 (Vg1) Bias Arrangement Vg2 Vd Bypass Capacitors - See App Note [2] Vg2 Vd 2 3 4 RF Out RF Out XD1002-BD RF In RF In 1 5 Vg1 Vg1 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 4 of 6 Characteristic Data and Specifications are subject to change without notice. (c)2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 0.05-50.0 GHz GaAs MMIC Distributed Amplifier July 2007 - Rev 11-Jul-07 D1002-BD App Note [1] Biasing - As shown in the bonding diagram, this device is operated with a single drain and gate voltage and it also includes a separate gain control voltage. Maximum gain bias is nominally Vd=8.5V, Vg1=0.0V, Vg2=1.0V, and Id=120mA. Gain can be adjusted by changing Vg1. It is recommended to use active biasing to keep the currents constant as the RF power and temperature vary; this gives the most reproducible results. Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this is 0.0V. Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias is available before applying the positive drain supply. App Note [2] Bias Arrangement - Each DC pad (Vd and Vg1,2) need to have DC bypass capacitance (~100-200 pF) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended. MTTF Table (TBD) These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry. Backplate Temperature 55 deg Celsius 75 deg Celsius 95 deg Celsius Channel Temperature deg Celsius deg Celsius deg Celsius Rth MTTF Hours FITs C/W C/W C/W E+ E+ E+ E+ E+ E+ Bias Conditions: Vd=8.5V, Id=120 mA Device Schematic Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 5 of 6 Characteristic Data and Specifications are subject to change without notice. (c)2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 0.05-50.0 GHz GaAs MMIC Distributed Amplifier July 2007 - Rev 11-Jul-07 D1002-BD Handling and Assembly Information CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Do not ingest. Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices or systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1) Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. (2) A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied in antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded antistatic workstation. Devices need careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers. Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the backside to enable grounding to the circuit. Microstrip substrates should be brought as close to the die as possible. The mounting surface should be clean and flat. If using conductive epoxy, recommended epoxies are Tanaka TS3332LD, Die Mat DM6030HK or DM6030HK-Pt cured in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy sparingly to avoid getting any on to the top surface of the die. An epoxy fillet should be visible around the total die periphery. For additional information please see the Mimix "Epoxy Specifications for Bare Die" application note. If eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately 0.0012 thick, placed between the die and the attachment surface should be used. A die bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. he gold-tin eutectic (80% Au 20% Sn) has a melting point of approximately 280 C (Note: Gold Germanium should be avoided). The work station temperature should be 310 C +/- 10 C. Exposure to these extreme temperatures should be kept to minimum. The collet should be heated, and the die pre-heated to avoid excessive thermal shock. Avoidance of air bridges and force impact are critical during placement. Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond pads. The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005") 99.99% pure gold ribbon with 0.5-2% elongation to minimize RF port bond inductance. Gold 0.025 mm (0.001") diameter wedge or ball bonds are acceptable for DC Bias connections. Aluminum wire should be avoided. Thermo-compression bonding is recommended though thermosonic bonding may be used providing the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters. Bonds should be made from the bond pads on the die to the package or substrate. All bonds should be as short as possible. Part Number for Ordering XD1002-BD-000V XD1002-BD-EV1 Description RoHS compliant die packed in vacuum release gel packs XD1002-BD evaluation module Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 6 of 6 Characteristic Data and Specifications are subject to change without notice. (c)2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. |
Price & Availability of XD1002-BD-EV1
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |